page:p2 - p 1 plastic - encapsulate transistors guangdong hottech indus trial co,. ltd. fe a tures epitaxial planar die construction. complementary pnp type available (mmst4403). ultar - small surface mount package. marking: k3 x maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 6 0 v col l ector - emitter v o l t age v ceo 4 0 v emitter - base v o l t a g e v ebo 6 v col l ector cur re n t - conti n u o us i c 6 00 m a col l ector p o w e r dissi p a t i on p c 2 00 m w s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter s y mbol test conditions m in m ax u nit collector - b as e breakdo w n voltage v cbo i c =100a,i e =0 60 v collector - e m itter breakd o wn volta g e v ceo i c =1ma,i b =0 40 v emitter - base breakdo w n voltage v ebo i e =100a,i c =0 6 v collector cut - off current i cex v c e =35 v ,v eb(off) =0.4v 0.1 a base cut - off current i bl v c e =35 v , v eb(off) =0.4v 0.1 a dc c urrent g ain h fe v c e =1 v , i c =0.1ma v c e =1 v , i c =1.0ma v c e =1 v , i c =10ma v c e =1 v , i c =150ma v c e =2 v , i c =500ma 20 40 80 100 40 300 collector - e m itter saturation voltage v ce(s a t ) i c =150ma,i b =15ma i c =500ma,i b =50ma 0.4 0.75 v base - emitter saturation voltage v be(sat) i c =150ma,i b =15ma i c =500ma,i b =50ma 0.95 1.2 v transition frequency f t v c e =10v, i e =20ma f=100mhz 250 mhz collector output capacitance c ob v c b =5v, i e = 0 ,f=1mhz 6.5 pf delay time t d v cc =30v,v be =2v, i c =150ma,i b =15ma 15 ns rise time t r 20 ns storage time t s v cc =30v,i c =150ma, i b1 =i b2 =15ma 225 ns fall time t f 30 ns mmst 4 401 ( np n ) 1. base 2. emitter sot - 323 3. collecto
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech indus trial co,. ltd. mmst 4 401 typical characteristics
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